In this report, new all-NMOS pixel architectures suitable for charged particle detection are presented. These pixels achieve high charge-to-voltage conversion factors (CVF) using a few number of transistors inside the pixel. The first pixel architecture uses a preamplifying stage close to the detector and a simple double sampling circuitry to store the voltage level of the detector after reset called reset level. The double sampling removes the offset mismatches of amplifiers and the reset noise of the detector. Offset mismatches of the source follower are also corrected by a second double sampling stage. A differential version of this pixel is also presented. |
